2008. 5. 6 1/2 semiconductor technical data mje13003hv triple diffused npn transistor revision no : 2 switching regulator application. high voltage and high speed switching application. features excellent switching times : t on =1.1 s(typ.), t f =0.7 s(typ.), at i c =1a high collector voltage : v cbo =900v. maximum rating (ta=25 ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.2 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 2.3 0.1 0.65 0.15 1.6 3.4 max b 1 23 + _ + _ + _ 15.50 0.5 + _ + _ + _ characteristic symbol rating unit collector-base voltage v cbo 900 v collector-emitter voltage v ceo 530 v emitter-base voltage v ebo 9 v collector current dc i c 1.5 a pulse i cp 3 base current i b 0.75 a collector power dissipation (tc=25 ) p c 20 w junction temperature t j 150 storage temperature range t stg -55 150 electrical characteristics (ta=25 ) *note : h fe classification r:20 35, o:25 40 characteristic symbol test condition min. typ. max. unit emitter cut-off current i ebo v eb =9v, i c =0 - - 10 a dc current gain h fe (1) v ce =10v, i c =10 a 15 - 40 *h fe (2) v ce =10v, i c =0.4a 20 - 40 h fe (3) v ce =10v, i c =1a 6 - - collector-emitter saturation voltage v ce(sat) i c =0.5a, i b =0.1a - - 0.8 v i c =1.5a, i b =0.5a - - 2.5 base-emitter saturation voltage v be(sat) i c =0.5a, i b =0.1a - - 1 v i c =1a, i b =0.25a - - 1.2 collector output capacitance c ob v cb =10v, f=0.1mhz, i e =0 - 21 - pf transition frequency f t v ce =10v, i c =0.1a 4 - - mhz turn-on time t on i b1 125? b1 i cc v =125v i b2 i b2 300 s i =i =0.2a 2% b1 b2 output duty cycle input < = - 1.1 - s storage time t stg - 3.0 - s fall time t f - 0.7 - s
2008. 5. 6 2/2 mje13003hv revision no : 2 static characteric 0 0 5 134 2 0.4 0.8 1.2 1.8 2.0 collector current i c (a) collector emitter voltage v ce (v) collector emitter voltage v ce (v) ib=500ma ib=50ma ib=100ma ib=0ma ib=400ma ib=200ma ib=300ma saturation voltage v be(sat) , v ce(sat) (v) 0.01 collector current i c (a) v ce(sat) vs. v be(sat) 0.1 1 10 100 0.1 1 10 i c =4ib v be(sat) v ce(sat) colletor current i c (a) 1 safe operating area 0.01 0.1 1 10 10 100 1000 i c max (pulse) i c max (dc) 5ms 1ms 10 s 100 s power dissipation p c (w) 0 0 p c - ta dc current gain h fe 0.01 collector current i o (a) dc current gain tstg, tf( s), time switching time 1 10 100 0.1 1 10 50 100 150 200 0.25 0.5 0.75 1 1.1 ambient temperature ta ( c) 1.25 v ce =10v 0.1 1 1 10 100 0.1 collector current i c (a) t stg t f tc=ta infinite heat sink
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